J Mater Sci Technol ›› 1999, Vol. 15 ›› Issue (04): 380-380.

• Research Articles • Previous Articles     Next Articles

Electronic Defects of Boron-doped Fullerene

Xingwang ZHANG, Yunjuan ZOU, Xuemei SONG, Guanghua CHEN, Hui YAN   

  1. Department of Physics, Lanzhou University, Lanzhou 730000, China...
  • Received:1999-01-15 Revised:1999-03-01 Online:1999-07-28 Published:2009-10-10
  • Contact: Hui YAN

Abstract: The ESR characteristics of boron-doped fullerene prepared by arc vaporization of B2O3 powder and graphite in a helium ambient are investigated for the first time. It is found that the obtained ESR spectrum of boron-doped fullerene is attributed to two components with the same g value of around 2.0025.

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