J. Mater. Sci. Technol. ›› 2020, Vol. 38: 237-243.DOI: 10.1016/j.jmst.2019.07.042
• Research Article • Previous Articles
O. Kapitanova Olesyaab, V. Emelin Evgenyc, G. Dorofeev Sergeya, V. Evdokimov Pavela, N. Panin Gennadycd, Lee Youngmine, Lee Sejoonef*()
Received:
2019-06-13
Revised:
2019-07-12
Accepted:
2019-07-23
Published:
2020-02-01
Online:
2020-02-10
Contact:
Lee Sejoon
O. Kapitanova Olesya, V. Emelin Evgeny, G. Dorofeev Sergey, V. Evdokimov Pavel, N. Panin Gennady, Lee Youngmin, Lee Sejoon. Direct patterning of reduced graphene oxide/graphene oxide memristive heterostructures by electron-beam irradiation[J]. J. Mater. Sci. Technol., 2020, 38: 237-243.
Fig. 1. Schematic illustrations for the fabrication of the lateral EB-rGO/GO/EB-rGO memristive heterostructure: (a) patterning of Pt/Ti electrodes on the SiO2/Si substrate, (b) spin-coating of the GO film onto the Pt pre-patterned SiO2/Si substrate, (c) electron-beam writing onto GO for the formation of local EB-rGO regions, and (d) memristive heterostructure in the form of laterally-arrayed EB-rGO/GO/EB-rGO stripes.
Fig. 2. (a) Top-view SEM image of the GO film (dark square) coated on the Pt (bright bands) pre-patterned Si/SiO2 substrate, (b) AFM image of the GO film; (c) AFM histogram for the GO film, and (d) I-V curves of the EB-rGO stripes fabricated by electron-beam irradiation with various doses (D = 36-216 mA s/cm2). The inset of (d) displays the SEM image of the sample, representing the EB-rGO stripes formed by electron-beam irradiation.
Samples | Vacc (kV) | Ibc (nA) | D (mA s/cm2) | Vb (V) | R (Ω/sq.) |
---|---|---|---|---|---|
GO | - | - | - | 0 | >1010 |
EB-rGO | 3 | 5 | 36 | 0 | 5 × 106 |
72 | 2 × 106 | ||||
108 | 8 × 105 | ||||
144 | 6 × 105 | ||||
180 | 5 × 105 | ||||
216 | 4 × 105 | ||||
10 | 0.15 | 100 | 2 × 109 | ||
250 | 4 × 108 | ||||
350 | 3 × 108 | ||||
500 | 1 × 108 | ||||
150 | 50 | 3 × 103 |
Table 1 Sheet resistance of as-prepared GO and electron beam-reduced rGO films formed at various electron-beam irradiation conditions.
Samples | Vacc (kV) | Ibc (nA) | D (mA s/cm2) | Vb (V) | R (Ω/sq.) |
---|---|---|---|---|---|
GO | - | - | - | 0 | >1010 |
EB-rGO | 3 | 5 | 36 | 0 | 5 × 106 |
72 | 2 × 106 | ||||
108 | 8 × 105 | ||||
144 | 6 × 105 | ||||
180 | 5 × 105 | ||||
216 | 4 × 105 | ||||
10 | 0.15 | 100 | 2 × 109 | ||
250 | 4 × 108 | ||||
350 | 3 × 108 | ||||
500 | 1 × 108 | ||||
150 | 50 | 3 × 103 |
Fig. 3. (a) Sheet resistance of EB-rGO as a function of the electron-beam dose supplied at Vacc =3 kV and Ibc =5 nA, (b) dependence of the electron-beam dose on sheet resistance of EB-rGO prepared at Vacc =10 kV and Ibc =0.15 nA, (с) I?V curves characteristics of EB-rGO fabricated by electron-beam irradiation with a dose of 150 mA s/cm2 at Vacc =10 kV and Ibc = 150 pA with and without bias voltages, and (d) Raman spectra of pristine GO and electron beam-induced EB-rGO.
Samples | Carrier concentration (cm-3) | Conductivity (S/cm) |
---|---|---|
As-prepared GO | <1010 | <10-8 |
Thermally-reduced GO (N2/H2, 360 °C) | -5 × 1017 | 0.4 |
EB-rGO (Ibc =1 nA, Vacc =10 keV, D =200 mA s/cm2) | 5 × 1016 | 8 × 10-2 |
Table 2 Hall-effect measurement results of as-prepared GO, electron beam-reduced rGO, thermally-reduced GO films.
Samples | Carrier concentration (cm-3) | Conductivity (S/cm) |
---|---|---|
As-prepared GO | <1010 | <10-8 |
Thermally-reduced GO (N2/H2, 360 °C) | -5 × 1017 | 0.4 |
EB-rGO (Ibc =1 nA, Vacc =10 keV, D =200 mA s/cm2) | 5 × 1016 | 8 × 10-2 |
Fig. 5. (a) I?V characteristics (with no forming-voltage stress) of the lateral EB-rGO/GO/EB-rGO memristive heterostructure obtained by electron-beam irradiation with D =200 mA s/cm2 at Vacc =3 keV. The upper and the lower insets of (a) show the bias setup for the I?V measurement of the fabricated memristor and the top-view SEM image of the fabricated memristor in the form of laterally-arrayed EB-rGO/GO/EB-rGO stripes. (b) Dependence of the hysteretic resistive-switching characteristics on the number of switching cycles for the EB-rGO/GO/EB-rGO memristive heterostructure after applying the forming-voltage stress (20 V, 15 min).
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