J. Mater. Sci. Technol. ›› 2020, Vol. 38: 237-243.DOI: 10.1016/j.jmst.2019.07.042

• Research Article • Previous Articles    

Direct patterning of reduced graphene oxide/graphene oxide memristive heterostructures by electron-beam irradiation

O. Kapitanova Olesyaab, V. Emelin Evgenyc, G. Dorofeev Sergeya, V. Evdokimov Pavela, N. Panin Gennadycd, Lee Youngmine, Lee Sejoonef*()   

  1. aLomonosov Moscow State University, Leninskie gory, 119991 Moscow, Russia
    bMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, Moscow Region, 141701, Russia
    cInstitute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia
    dNano Information Technology Academy, Dongguk University-Seoul, Seoul 04620, Korea
    eQuantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 04620, Korea
    fDepartment of Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Korea
  • Received:2019-06-13 Revised:2019-07-12 Accepted:2019-07-23 Published:2020-02-01 Online:2020-02-10
  • Contact: Lee Sejoon

Abstract:

Memristive heterostructures, composed of reduced graphene oxide with different degree of reduction, were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define high- and low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range (< 1 V). The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.

Key words: Electron beam irradiation, Reduced graphene oxide, Graphene oxide, Memristive heterostructure