J. Mater. Sci. Technol. ›› 2019, Vol. 35 ›› Issue (10): 2194-2199.DOI: 10.1016/j.jmst.2019.05.040
• Orginal Article • Previous Articles Next Articles
Xiaohan Liab, Biaohong Huangab, Weijin Huab*(), Zhidong Zhangab
Online:
2019-10-05
Published:
2019-08-28
Contact:
Hu Weijin
Xiaohan Li, Biaohong Huang, Weijin Hu, Zhidong Zhang. Electrical and optical modulation on ferroelectric properties of P(VDF-TrFE) thin film capacitors[J]. J. Mater. Sci. Technol., 2019, 35(10): 2194-2199.
Fig. 1. Structure and morphology characterization: (a) XRD pattern of P(VDF-TrFE) film on different substrates (Au, 0.05% NSTO, 0.1% NSTO, and 0.5% NSTO substrate.) (b) Particle size of P(VDF-TrFE) crystalline on different substrates. (c), (d), (e), (f) AFM morphology images of P(VDF-TrFE) copolymer films on different substrates. Scale bars, 200 nm.
Fig. 2. Ferroelectric hysteresis loops and coercive fields of devices: (a), (b) PFM amplitude image and (c), (d) phase image of square domains on Au and 0.05% NSTO substrates with opposite domains written by a PFM tip with alternate voltage of +8 V and -8 V. Scale bars, 2 μm. (e) P-E loops of P(VDF-TrFE) films on different substrates (f) Coercive field for P(VDF-TrFE) films.
Fig. 3. Switching dynamics of P(VDF-TrFE) thin films on different substrates: Switched polarization Psw as a function of pulse width at different external fields on typical substrates of (a) Au and (b) 0.1% NSTO, respectively. The red data and green data are obtained under positive voltage and negative voltage, respectively. Solid lines are the fittings according to KAI model. (c) Switching time to versus 1/E on various substrates. (d) Activation field δ+ and δ- under positive and negative voltages obtained from (c) for films on different substrates, Δδ is the difference of δ+ and δ-.
Fig. 4. Band model analysis of the semiconducting electrode effect on switching dynamics of P(VDF-TrFE) thin film capacitors: (a) The voltage-pulse sequence of PUND test for a positive electric field. (b) The corresponding band alignment of Cu/P(VDF-TrFE)/NSTO structure before the test in (a). (c) The voltage-pulse sequence of PUND test for a negative electric field. (d) The corresponding band alignment of the device before the test as-shown in (c).
Fig. 5. Light modulation on ferroelectric switching of P(VDF-TrFE) thin film capacitors: (a) and (b), P-E hysteresis loops in the dark and under UV light illumination for P(VDF-TrFE) thin film capacitors on Au and 0.05% NSTO electrodes, respectively. (c) and (d) the corresponding switching I-V curves in the dark and under UV light illumination. Insets: enlarged region near the switching current peaks.
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