J. Mater. Sci. Technol. ›› 2019, Vol. 35 ›› Issue (5): 764-768.DOI: 10.1016/j.jmst.2018.11.010
• Orginal Article • Previous Articles Next Articles
Lei Zhangab, Weijun Rena?(), Xiaohua Luoac, Zhidong Zhanga
Received:
2018-08-17
Accepted:
2018-10-30
Online:
2019-05-10
Published:
2019-02-20
Contact:
Ren Weijun
About author:
1 These authors contribute equally to this paper.
Lei Zhang, Weijun Ren, Xiaohua Luo, Zhidong Zhang. Magnetic and magnetotransport properties of single-crystalline R2PdGe6 (R = Pr, Gd and Tb)[J]. J. Mater. Sci. Technol., 2019, 35(5): 764-768.
Fig. 1 (a) Structural sketch of R2PdGe6, microscopic photos of (b) Pr2PdGe6, (c) Gd2PdGe6, (d) Tb2PdGe6, and refinement of powder XRD patterns at room temperature of (e) Pr2PdGe6, (f) Gd2PdGe6 and (g) Tb2PdGe6.
Pr2PdGe6 | Gd2PdGe6 | Tb2PdGe6 | |
---|---|---|---|
a (nm) | 0.41526 | 0.41076 | 0.40766 |
b (nm) | 0.40734 | 0.40365 | 0.40196 |
c (nm) | 2.1992 | 2.1676 | 2.1516 |
At (at.%) | Pr22.60Pd12.09Ge65.31 | Gd22.91Pd12.06Ge65.03 | Tb23.16Pd14.95Ge61.89 |
Rp | 10.77% | 10.69% | 11.71% |
Rwp | 14.89% | 14.49% | 16.13% |
χ2 | 4.997 | 6.037 | 0.968 |
Table 1 Lattice parameters, typical composition, and the quality factors of Rietveld refinement of R2PdGe6 (R = Pr, Gd and Tb; a, b, c: lattice constants; At: atomic fraction; Rp: profile factor; Rwp: weighted profile factor; χ2: reduced chi-square).
Pr2PdGe6 | Gd2PdGe6 | Tb2PdGe6 | |
---|---|---|---|
a (nm) | 0.41526 | 0.41076 | 0.40766 |
b (nm) | 0.40734 | 0.40365 | 0.40196 |
c (nm) | 2.1992 | 2.1676 | 2.1516 |
At (at.%) | Pr22.60Pd12.09Ge65.31 | Gd22.91Pd12.06Ge65.03 | Tb23.16Pd14.95Ge61.89 |
Rp | 10.77% | 10.69% | 11.71% |
Rwp | 14.89% | 14.49% | 16.13% |
χ2 | 4.997 | 6.037 | 0.968 |
Fig. 2 (a) Temperature dependences of magnetization of Pr2PdGe6 crystal in magnetic field H?=?100?Oe applied along different crystallographic axes (the inset shows the enlarge figure for H//a) and (b) magnetic-field dependences of magnetization M at 2?K of Pr2PdGe6 crystal for H along different crystallographic axes (the inset shows the hysteresis loop at 2?K of Pr2PdGe6 for H//c).
Fig. 3 (a) Temperature dependences of magnetization of Gd2PdGe6 crystal in magnetic field H?=?100?Oe applied along different crystallographic axes and (b) magnetic-field dependences of magnetization at 2?K of Gd2PdGe6 crystal for H along different crystallographic axes.
Fig. 4 (a) Temperature dependences of magnetization of Tb2PdGe6 crystal in magnetic field H?=?100?Oe applied along different crystallographic axes and (b) magnetic-field dependences of magnetization at 2?K of Tb2PdGe6 crystal for H along different crystallographic axes.
Fig. 6 MR of R2PdGe6 at 2?K: (a) Pr2PdGe6 for I//a, H//b and H//c; (b) Gd2PdGe6 for I//a, H//b and H//c; (c) Tb2PdGe6 for I//[110], H// [11ˉ0] and H//c.
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