J. Mater. Sci. Technol. ›› 2019, Vol. 35 ›› Issue (5): 769-776.DOI: 10.1016/j.jmst.2018.11.003
• Orginal Article • Previous Articles Next Articles
Shuang Lianga, Gang Heab??(), Die Wanga, Fen Qiaoc?()
Received:
2018-04-27
Accepted:
2018-07-02
Online:
2019-05-10
Published:
2019-02-20
Contact:
He Gang,Qiao Fen
About author:
1 These authors contribute equally to this paper.
Shuang Liang, Gang He, Die Wang, Fen Qiao. Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks[J]. J. Mater. Sci. Technol., 2019, 35(5): 769-776.
Sample | t (nm) | Cox (pF) | K | J (A/cm2) |
---|---|---|---|---|
HYO-as-dep | 17.65 | 161 | 12 | 5.40?×?10-5 |
HYO-0.5?nm Al2O3 | 17.40 | 193 | 14.7 | 2.01?×?10-5 |
HYO-1?nm Al2O3 | 18.32 | 159 | 12.3 | 3.97?×?10-6 |
HYO-2?nm Al2O3 | 18.43 | 126 | 9.5 | 7.50?×?10-6 |
HYO-3?nm Al2O3 | 18.39 | 133 | 10.0 | 1.41?×?10-5 |
Table 1 Parameters of the HffYO/Al2O3/Si gate stacks with different Al2O3 thickness extracted from C-V and J-V curves.
Sample | t (nm) | Cox (pF) | K | J (A/cm2) |
---|---|---|---|---|
HYO-as-dep | 17.65 | 161 | 12 | 5.40?×?10-5 |
HYO-0.5?nm Al2O3 | 17.40 | 193 | 14.7 | 2.01?×?10-5 |
HYO-1?nm Al2O3 | 18.32 | 159 | 12.3 | 3.97?×?10-6 |
HYO-2?nm Al2O3 | 18.43 | 126 | 9.5 | 7.50?×?10-6 |
HYO-3?nm Al2O3 | 18.39 | 133 | 10.0 | 1.41?×?10-5 |
Sample | t (nm) | Cox (pF) | K | Cfb (pF) | Vfb (V) | ΔVfb (V) | Qox (cm-2) | Nbt (cm-2) | J (A/cm2) |
---|---|---|---|---|---|---|---|---|---|
HYO-as-dep | 19.4 | 177 | 14.77 | 48.63 | 0.21 | 0.09 | -2.11?×?1023 | -3.17?×?1023 | 8.40?×?10-6 |
HYO-200?°C | 19.4 | 155 | 12.63 | 47.69 | 0.96 | 0.02 | 3.09?×?1022 | -6.17?×?1022 | 3.37?×?10-5 |
HYO-250?°C | 19.4 | 166 | 13.68 | 48.26 | 0.33 | 0.01 | 6.61?×?1022 | -3.30?×?1022 | 2.45?×?10-6 |
HYO-300?°C | 19.4 | 188 | 15.06 | 48.78 | 0.39 | 0.13 | -3.58?×?1023 | -4.66?×?1023 | 1.75?×?10-4 |
Table 2 Parameters of the Al/HfYO/1-nm-thick Al2O3/Si MOS capacitors at different temperatures extracted from C-V and J-V curves.
Sample | t (nm) | Cox (pF) | K | Cfb (pF) | Vfb (V) | ΔVfb (V) | Qox (cm-2) | Nbt (cm-2) | J (A/cm2) |
---|---|---|---|---|---|---|---|---|---|
HYO-as-dep | 19.4 | 177 | 14.77 | 48.63 | 0.21 | 0.09 | -2.11?×?1023 | -3.17?×?1023 | 8.40?×?10-6 |
HYO-200?°C | 19.4 | 155 | 12.63 | 47.69 | 0.96 | 0.02 | 3.09?×?1022 | -6.17?×?1022 | 3.37?×?10-5 |
HYO-250?°C | 19.4 | 166 | 13.68 | 48.26 | 0.33 | 0.01 | 6.61?×?1022 | -3.30?×?1022 | 2.45?×?10-6 |
HYO-300?°C | 19.4 | 188 | 15.06 | 48.78 | 0.39 | 0.13 | -3.58?×?1023 | -4.66?×?1023 | 1.75?×?10-4 |
Fig. 13 C-V characteristics measured at different frequencies ranging from 0.5 MHZ to 1MHZ for the Al/HfYO/1-nm-thick Al2O3/Si stacks annealed at different temperatures.
Fig. 15 Schottky emission (SE), P-F emission and direct tunneling plots for the Al/HfYO/1-nm-thick Al2O3/Si stacks annealed at different temperatures for gate injection.
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