Structural, Optical and Electrical Properties of Ga Doped ZnO/Cu grid/Ga Doped ZnO Transparent Electrodes

doi:10.1016/j.jmst.2015.07.018

J. Mater. Sci. Technol. ›› 2015, Vol. 31 ›› Issue (11): 1108-1110.DOI: 10.1016/j.jmst.2015.07.018

• Orginal Article • Previous Articles Next Articles

Structural, Optical and Electrical Properties of Ga Doped ZnO/Cu grid/Ga Doped ZnO Transparent Electrodes

Cholho Jang^{1, 2}, Qingjun Jiang¹, Jianguo Lu¹, Zhizhen Ye¹

1 State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; 2 Department of Materials Science, Kim Il Sung University, Pyongyang, Republic of Korea

Received:2015-01-18 Online:2015-11-10
Contact: * Corresponding author. Prof., Ph.D.; Tel.: +86 571 87952625; Fax: +86 57187952625.E-mail address: yezz@zju.edu.cn (Z. Ye).
Supported by:
The authors acknowledge the support of the key project of the National Natural Science Foundation of China under Grant Nos.91333203 and 51172204, the Program for Innovative Research Team in University of Ministry of Education of China under Grant No.IRT13037, and the Zhejiang Provincial Department of Science and Technology of China under Grant No.2010R50020.

Abstract

Abstract: Ga doped ZnO (GZO)/Cu grid/GZO transparent conductive electrode (TCE) structures were fabricated at room temperature (RT) by using electron beam evaporation (EBE) for the Cu grids and RF magnetron sputtering for the GZO layers.In this work, we investigated the electrical and optical characteristics of GZO/Cu grid/GZO multilayer electrode for thin film solar cells by using evaporated Cu grid and sputtered GZO thin films to enhance the optical transparency without significantly affecting their conductivity.The optical transmittance and sheet resistance of GZO/Cu grid/GZO multilayer are higher than those of GZO/Cu film/GZO multilayer independent of Cu grid separation distance and increase with increasing Cu grid separation distances.The calculation of both transmittance and sheet resistance of GZO/Cu grid/GZO multilayer was based on Cu filling factor correlated with the geometry of Cu grid.The calculated values for the transmittance and sheet resistance of the GZO/Cu grid/GZO multilayer were similar to the experimentally observed ones.The highest figure of merit Φ_TC is 5.18 × 10^-3 Ω^-1 for the GZO/Cu grid/GZO multilayer with Cu grid separation distance of 1 mm was obtained, in this case, the transmittance and resistivity were 82.72% and 2.17 × 10^-4 Ω cm, respectively.The transmittance and resistivity are acceptable for practical thin film solar cell applications.

Key words: Transparent electrode, Electron beam evaporation, Cu grid, Ga doped ZnO, Multilayer film

Cholho Jang, Qingjun Jiang, Jianguo Lu, Zhizhen Ye. Structural, Optical and Electrical Properties of Ga Doped ZnO/Cu grid/Ga Doped ZnO Transparent Electrodes[J]. J. Mater. Sci. Technol., 2015, 31(11): 1108-1110.

Figures/Tables 4

(a) XRD pattern, (b) optical microscopic image and (c) TEM cross sectional image for the GZO/Cu grid/GZO multilayer with a Cu grid separation distance of 1 mm.

Transmittance spectra of the GZO/Cu grid/GZO multilayer as a function of the wavelength for different Cu grid separation distances.

Calculated and observed transmittances and sheet resistances for the GZO/Cu grid/GZO multilayer with different Cu grid separation distances.

Figure of merit of the GZO/Cu grid/GZO multilayer with different Cu grid separation distances.

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Structural, Optical and Electrical Properties of Ga Doped ZnO/Cu grid/Ga Doped ZnO Transparent Electrodes

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